• image of 晶体管 - IGBT - 阵列>FII30-06D
  • image of 晶体管 - IGBT - 阵列>FII30-06D
FII30-06D
Transistors - IGBTs - Arrays
IXYS
IGBT H BRIDGE 6
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Tube
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image of 晶体管 - IGBT - 阵列>FII30-06D
image of 晶体管 - IGBT - 阵列>FII30-06D
FII30-06D
Transistors - IGBTs - Arrays
IXYS
IGBT H BRIDGE 6
-
Tube
-
TYPEDESCRIPTION
MfrIXYS
Series-
PackageTube
Product StatusObsolete
IGBT TypeNPT
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)30 A
Power - Max100 W
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 20A
Current - Collector Cutoff (Max)600 µA
Input Capacitance (Cies) @ Vce1.1 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Casei4-Pac™-5
Supplier Device PackageISOPLUS i4-PAC™
Base Product NumberFII30
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