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  • image of 晶体管 - FET，MOSFET - 阵列>SIZ254DT-T1-GE3
  • image of 晶体管 - FET，MOSFET - 阵列>SIZ254DT-T1-GE3
  • image of 晶体管 - FET，MOSFET - 阵列>SIZ254DT-T1-GE3
  • image of 晶体管 - FET，MOSFET - 阵列>SIZ254DT-T1-GE3
： SIZ254DT-T1-GE3
： Transistors - FETs, MOSFETs - Arrays
： Vishay Siliconix
： DUAL N-CHANNEL
： -
： Tape & Reel (TR) Cut Tape (CT)
： -

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image of 晶体管 - FET，MOSFET - 阵列>SIZ254DT-T1-GE3
image of 晶体管 - FET，MOSFET - 阵列>SIZ254DT-T1-GE3
image of 晶体管 - FET，MOSFET - 阵列>SIZ254DT-T1-GE3
：
SIZ254DT-T1-GE3
：
Transistors - FETs, MOSFETs - Arrays
：
Vishay Siliconix
：
DUAL N-CHANNEL
：
-
：
Tape & Reel (TR) Cut Tape (CT)
：
-
TYPEDESCRIPTION
MfrVishay Siliconix
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)70V
Current - Continuous Drain (Id) @ 25°C11.7A (Ta), 32.5A (Tc)
Rds On (Max) @ Id, Vgs16.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds795pF @ 35V, 765pF @ 35V
Power - Max4.3W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (3.3x3.3)
Base Product NumberSIZ254
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 Orignal genuine       Each chip comes from the original factory


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 Spot inventory       Only make original stock

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Original stockBom DistributioAffordable Price


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+86 15989434812

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