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  • image of 晶体管 - FET，MOSFET - 阵列>SI3900DV-T1-GE3
  • image of 晶体管 - FET，MOSFET - 阵列>SI3900DV-T1-GE3
： SI3900DV-T1-GE3
： Transistors - FETs, MOSFETs - Arrays
： Vishay Siliconix
： MOSFET 2N-CH 20
： -
： Tape & Reel (TR) Cut Tape (CT)
： -

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image of 晶体管 - FET，MOSFET - 阵列>SI3900DV-T1-GE3
image of 晶体管 - FET，MOSFET - 阵列>SI3900DV-T1-GE3
：
SI3900DV-T1-GE3
：
Transistors - FETs, MOSFETs - Arrays
：
Vishay Siliconix
：
MOSFET 2N-CH 20
：
-
：
Tape & Reel (TR) Cut Tape (CT)
：
-
TYPEDESCRIPTION
MfrVishay Siliconix
SeriesTrenchFET®
PackageTape & Reel (TR)
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2A
Rds On (Max) @ Id, Vgs125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
Base Product NumberSI3900
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