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  • image of 晶体管 - FET，MOSFET - 单个>NVD6416ANLT4G-001-VF01
  • image of 晶体管 - FET，MOSFET - 单个>NVD6416ANLT4G-001-VF01
： NVD6416ANLT4G-001-VF01
： Transistors - FETs, MOSFETs - Single
： onsemi
： MOSFET N-CH 100
： -
： Tape & Reel (TR)
： -

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image of 晶体管 - FET，MOSFET - 单个>NVD6416ANLT4G-001-VF01
image of 晶体管 - FET，MOSFET - 单个>NVD6416ANLT4G-001-VF01
：
NVD6416ANLT4G-001-VF01
：
Transistors - FETs, MOSFETs - Single
：
onsemi
：
MOSFET N-CH 100
：
-
：
Tape & Reel (TR)
：
-
TYPEDESCRIPTION
Mfronsemi
SeriesAutomotive, AEC-Q101
PackageTape & Reel (TR)
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs74mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Base Product NumberNVD641
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